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Freescale Semiconductor Technical Data
Document Number: MRF7S35120HS Rev. 1, 6/2008
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz. * Typical Pulsed Performance: VDD = 32 Volts, IDQ = 150 mA, Pout = 120 Watts Peak (24 Watts Avg.), Pulsed Signal, f = 3500 MHz, Pulse Width = 100 sec, Duty Cycle = 20% Power Gain -- 12 dB Drain Efficiency -- 40% * Typical WiMAX Performance: VDD = 32 Volts, IDQ = 900 mA, Pout = 18 Watts Avg., f = 3500 MHz, 802.16d, 64 QAM 3/4, 4 Bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF Power Gain -- 13 dB Drain Efficiency -- 16% RCE -- - 33 dB (EVM -- 2.2% rms) * Capable of Handling 10:1 VSWR, @ 32 Vdc, 3300 MHz, 120 Watts Peak Power * Capable of Handling 3 dB Overdrive @ 32 Vdc Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * Greater Negative Gate - Source Voltage Range for Improved Class C Operation * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF7S35120HSR3
3100- 3500 MHz, 120 W PEAK, 32 V PULSED LATERAL N - CHANNEL RF POWER MOSFET
CASE 465A - 06, STYLE 1 NI - 780S
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TC TJ Value - 0.5, +65 - 6.0, +10 - 65 to +150 150 225 Unit Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 79C, 120 W Pulsed, 100 sec Pulse Width, 20% Duty Cycle Case Temperature 72C, 120 W Pulsed, 500 sec Pulse Width, 10% Duty Cycle Symbol RJC Value (2,3) 0.11 0.12 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF7S35120HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 32 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 Adc) Gate Quiescent Voltage (VDD = 32 Vdc, ID = 150 mAdc, Measured in Functional Test) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2.0 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 32 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 32 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 32 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss -- -- -- 0.87 464 214 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) 1.2 1.5 0.1 1.9 2.4 0.17 2.7 3 0.3 Vdc Vdc Vdc IGSS IDSS IDSS -- -- -- -- -- -- 1 1 10 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 32 Vdc, IDQ = 150 mA, Pout = 120 W Peak (24 W Avg.), f = 3100 MHz and f = 3500 MHz, Pulsed, 100 sec Pulse Width, 20% Duty Cycle, 25 ns Input Rise Time Power Gain Drain Efficiency Input Return Loss Gps D IRL 10.5 38 -- 12 40 - 15 13.5 -- -8 dB % dB
Pulsed RF Performance (In Freescale Application Test Fixture, 50 ohm system) VDD = 32 Vdc, IDQ = 150 mA, Pout = 120 W Peak (24 W Avg.), f = 3100 MHz and f = 3500 MHz, Pulsed, 100 sec Pulse Width, 20% Duty Cycle, 25 ns Input Rise Time Output Pulse Droop (500 sec Pulse Width, 10% Duty Cycle) Load Mismatch Tolerance (VSWR = 10:1 at all Phase Angles) 1. Part internally matched both on input and output. DRPout VSWR - T -- 0.3 -- dB
No Degradation in Output Power
MRF7S35120HSR3 2 RF Device Data Freescale Semiconductor
B1 VBIAS + C9 + C8 C7 R1 Z12 Z11 Z1 Z2 Z3 Z4 Z5 C10 DUT Z6 Z7 Z8 Z9 Z10 Z13 Z24 C6
+ C2
+ C3
+ C4
+ C1
VSUPPLY
Z14 Z15 Z16 Z17 Z18 Z19 Z20 Z21 Z22 C5
Z23
RF OUTPUT
RF INPUT
Z1 Z2* Z3* Z4 Z5, Z22 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13
0.120 x 0.082 Microstrip 0.094 x 0.310 Microstrip 0.3502 x 0.082 Microstrip 0.120 x 0.629 Microstrip 0.050 x 0.082 Microstrip 0.052 x 0.082 Microstrip 0.084 x 0.436 Microstrip 1.142 x 0.082 Microstrip 0.144 x 0.564 Microstrip 0.078 x 0.564 Microstrip 0.048 x 1.349 Microstrip 0.120 x 0.175 Microstrip 0.087 x 0.576 Microstrip
Z14 Z15 Z16 Z17 Z18 Z19 Z20 Z21 Z23 Z24 PCB
0.390 x 0.576 Microstrip 0.202 x 0.082 Microstrip 0.066 x 0.162 Microstrip 0.084 x 0.330 Microstrip 0.105 x 0.082 Microstrip 0.080 x 0.147 Microstrip 0.366 x 0.082 Microstrip 0.070 x 0.207 Microstrip 0.734 x 0.082 Microstrip 0.071 x 0.477 Microstrip Arlon CuClad 250GX - 0300- 55- 22, 0.030, r = 2.55
* Line length includes microstrip bends
Figure 1. MRF7S35120HSR3 Test Circuit Schematic
Table 5. MRF7S35120HSR3 Test Circuit Component Designations and Values
Part B1 C1 C2 C3, C4 C5 C6, C7, C10 C8, C9 R1 Description 47 , 100 MHz Short Ferrite Bead 470 F, 63 V Electrolytic Capacitor 47 F, 50 V Electrolytic Capacitor 22 F, 35 V Tantalum Capacitors 3.3 pF Chip Capacitor 2.7 pF Chip Capacitors 22 F, 25 V Tantalum Capacitors 51 , 1/4 W Chip Resistor Part Number 2743019447 477KXM063M 476KXM050M T491X226K035AT ATC100B3R3CT500XT ATC100B2R7BT500XT ECS - T1ED226R CRCW120651R0FKEA Manufacturer Fair- Rite Illinois Cap. Illinois Cap. Kemet ATC ATC Panasonic TE series Vishay
MRF7S35120HSR3 RF Device Data Freescale Semiconductor 3
C9
C8 C6
C1
B1
R1 C7 C2
C3
C4
C10 CUT OUT AREA
C5
MRF7S35120HS Rev. 3a
Figure 2. MRF7S35120HSR3 Test Circuit Component Layout
MRF7S35120HSR3 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
1000 Coss ID, DRAIN CURRENT (AMPS) Ciss 100
C, CAPACITANCE (pF)
100
TJ = 200C 10 TJ = 150C TJ = 175C
10 Crss 1 Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 0.1 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
TC = 25C 1 1 10 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 100
Figure 3. Capacitance versus Drain - Source Voltage
13 f = 3500 MHz 12 Gps, POWER GAIN (dB) 3300 MHz 11 3100 MHz 10 D 23 32 Gps D, DRAIN EFFICIENCY (%) 41 50 Pout, OUTPUT POWER (dBm) PULSED 56
Figure 4. DC Safe Operating Area
P3dB = 52 dBm (157 W) 55 P2dB = 51.7 dBm (149 W) 54 53 52 P1dB = 51.3 dBm (135 W)
Ideal
Actual 51 50 49 48 36 37 38 39 40 41 42 43 44 45 Pin, INPUT POWER (dBm) PULSED VDD = 32 Vdc, IDQ = 150 mA, f = 3500 MHz Pulse Width = 100 sec, Duty Cycle = 20%
9
VDD = 32 Vdc, IDQ = 150 mA Pulse Width = 100 sec Duty Cycle = 20% 3 10 Pout, OUTPUT POWER (WATTS) PULSED 100
14
8
5 200
Figure 5. Pulsed Power Gain and Drain Efficiency versus Output Power
14 IDQ = 1000 mA 13 Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) 12 11 10 9 8 1 10 Pout, OUTPUT POWER (WATTS) PULSED 100 200 150 mA VDD = 32 Vdc, f = 3500 MHz Pulse Width = 100 sec, Duty Cycle = 20% 500 mA 300 mA 13 12
Figure 6. Pulsed Output Power versus Input Power
32 V 11 10 9 8 7 6 3 10 Pout, OUTPUT POWER (WATTS) PULSED 100 200 IDQ = 150 mA, f = 3500 MHz Pulse Width = 100 sec Duty Cycle = 20% 30 V 28 V 26 V
VDD = 24 V
Figure 7. Pulsed Power Gain versus Output Power
Figure 8. Pulsed Power Gain versus Output Power
MRF7S35120HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
250 Pout, OUTPUT POWER (WATTS) PULSED 3300 MHz -30_C 200 3100 MHz 25_C 3500 MHz -30_C 150 3300 MHz 25_C 3100 MHz 85_C 100 3300 MHz 85_C 3500 MHz 85_C VDD = 32 Vdc, IDQ = 150 mA Pulse Width = 100 sec, Duty Cycle = 20% 0 0 5 10 15 20 25 Pin, INPUT POWER (WATTS) PULSED 3500 MHz 25_C 3100 MHz -30_C Gps, POWER GAIN (dB) 13.5 12 10.5 9 7.5 6 1 10 100 Pout, OUTPUT POWER (WATTS) PULSED TC = -30_C 85_C 25_C 85_C D 15 VDD = 32 Vdc, IDQ = 150 mA, f = 3100 MHz Pulse Width = 100 sec, Duty Cycle = 20% 60 25_C -30_C 50 40 30 20 10 0 300 D, DRAIN EFFICIENCY (%)
Gps
50
Figure 9. Pulsed Output Power versus Input Power
15 13.5 Gps, POWER GAIN (dB) 12 TC = -30_C 10.5 25_C 9 7.5 6 1 10 85_C
Figure 10. Pulsed Power Gain and Drain Efficiency versus Output Power -- 3100 MHz
60 -30_C 50 25_C 40 30 85_C D 10 0 300 20 D, DRAIN EFFICIENCY (%) D, DRAIN EFFICIENCY (%)
VDD = 32 Vdc, IDQ = 150 mA, f = 3300 MHz Pulse Width = 100 sec, Duty Cycle = 20% Gps
100
Pout, OUTPUT POWER (WATTS) PULSED
Figure 11. Pulsed Power Gain and Drain Efficiency versus Output Power -- 3300 MHz
15 13.5 Gps, POWER GAIN (dB) 12 TC = -30_C 10.5 25_C 9 7.5 6 1 10 100 Pout, OUTPUT POWER (WATTS) PULSED 85_C D 10 0 300 85_C 20 25_C 30 60 -30_C 50 40
VDD = 32 Vdc, IDQ = 150 mA, f = 3500 MHz Pulse Width = 100 sec, Duty Cycle = 20% Gps
Figure 12. Pulsed Power Gain and Drain Efficiency versus Output Power -- 3500 MHz
MRF7S35120HSR3 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
14 13.5 Gps, POWER GAIN (dB) 13 Gps 12.5 12 11.5 11 10.5 10 3100 VDD = 32 Vdc, IDQ = 150 mA, Pout = 120 W Pulse Width = 100 sec, Duty Cycle = 20% 3150 3200 3250 3300 3350 3400 3450 IRL -18 -27 -36 3500 IRL, INPUT RETURN LOSS (dB) D, DRAIN EFFICIENCY (%) 13.6 13.4 13.2 13 12.8 12.6 GAIN (dB) -9 D 43 42 41 40 D, DRAIN EFFICIENCY (%)
f, FREQUENCY (MHz)
Figure 13. Pulsed Power Gain, Drain Efficiency and IRL versus Frequency
RCE (RELATIVE CONSTELLATION ERROR (dB) -28 -29 -30 -31 -32 -33 -34 -35 -36 -37 -38 41 41.5 42 42.5 43 43.5 44 Pout, OUTPUT POWER (dBm) Gps VDD = 32 Vdc, IDQ = 900 mA, f = 3500 MHz Single-Carrier OFDM 802.16d, 64 QAM 3/4 4 Bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF RCE 21 20 19 D 18 17 16 15 14 13 12 11
Figure 14. Single - Channel OFDM Relative Constellation Error, Drain Efficiency and Gain versus Output Power
1010
MTTF (HOURS)
109
108
107 90 110 130 150 170 190 210 TJ, JUNCTION TEMPERATURE (C) 230 250
This above graph displays calculated MTTF in hours when the device is operated at VDD = 32 Vdc, Pout = 120 W Peak, Pulse Width = 100 sec, Duty Cycle = 20%, and D = 40%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Figure 15. MTTF versus Junction Temperature MRF7S35120HSR3 RF Device Data Freescale Semiconductor 7
Zo = 25 Zload f = 3500 MHz
f = 2900 MHz f = 3500 MHz
f = 2900 MHz Zsource
VDD = 32 Vdc, IDQ = 150 mA, Pout = 120 W Peak f MHz 2900 3100 3300 3500 Zsource W 0.825 - j4.72 1.1 - j6.74 3.95 - j10.8 18 - j1.1 Zload W 6.03 - j0.487 4.63 - j0.0472 2.65 - j1.44 3.65 - j2.56
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MRF7S35120HSR3 8 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
4X U (FLANGE)
B
1
4X Z (LID)
(FLANGE)
B
2
2X
K
D bbb
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF
TA
M
B
M
N
(LID)
R
M
(LID)
ccc M H
3
TA
M
B
M
ccc aaa
M
TA TA
M
B B
M
(INSULATOR)
S
M
(INSULATOR) M
bbb C
M
TA
B
M
M
M
F T
SEATING PLANE
E A
(FLANGE)
A
CASE 465A - 06 ISSUE H NI - 780S
STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE
MRF7S35120HSR3 RF Device Data Freescale Semiconductor 9
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 1 Date May 2008 June 2008 * Initial Release of Data Sheet * Corrected Pout error and changed from 42.5 Watts to 18 Watts, Typical WiMAX Performance bullet, p. 1 Description
MRF7S35120HSR3 10 RF Device Data Freescale Semiconductor
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MRF7S35120HSR3
Document Number: RF Device Data MRF7S35120HS Rev. 1, 6/2008 Freescale Semiconductor
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